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PBSS4032ND Datasheet, NXP Semiconductors

PBSS4032ND Datasheet, NXP Semiconductors

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PBSS4032ND transistor equivalent

  • 3.5a npn low vcesat (biss) transistor.
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PBSS4032ND Features and benefits

PBSS4032ND Features and benefits


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* Low collector-emitter saturation voltage VCEsat Optimized switching time High collector current capability IC and ICM High colle.

PBSS4032ND Application

PBSS4032ND Application


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* DC-to-DC conversion Battery-driven devices Power management Charging circuits 1.4 Quick referen.

PBSS4032ND Description

PBSS4032ND Description

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4032PD. 1.2 Features
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* Low collector-emitter saturation.

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TAGS

PBSS4032ND
3.5A
NPN
low
VCEsat
BISS
transistor
NXP Semiconductors

Manufacturer


NXP (https://www.nxp.com/) Semiconductors

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